TGS4301-EPU Datasheet, PDF (6/7 Pages) TriQuint Semiconductor – High Power Ka-Band Absorptive SPDT Switch

Advance Product Information
January 28, 2003
TGS4301-EPU
MMIC Carrier Plate Assembly Drawing
Notes:
1. For biasing flexibility, two sets of bias pads are available for each branch.
-Control Lines ±5V (VC2 or VC4, VB1 or VB4) use on-chip resistors for diode current
control.
-Auxiliary pads (VC1 or VC3, VB2 or VB3) can be used if connected to a 20mA current
source.
2. Positive biasing with both VC2 and VC4 or VB1 and VB4 may increase the switch’s isolation
at the expense of higher dissipated power.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] Web: www.triquint.com
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