TGA2611-SM_15 Datasheet, PDF (5/14 Pages) TriQuint Semiconductor – 2 6 GHz GaN LNA

TGA2611-SM
2-6 GHz GaN LNA
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 10 V, IDQ = 100 mA, VG = -2.3 V Typical, CW
30
P_SAT vs. Frequency vs. V_D
28
26
24
22
8V
20
10 V
18
12 V
16
14
12
P_IN = 10 dBm, Temp = 25 °C
10
1
2
3
4
5
6
7
8
Frequency (GHz)
30
28
26
24
22
20
18
16
14
12
10
1
P_SAT vs. Frequency vs. Temp.
85 °C
25 °C
-40 °C
P_IN = 10 dBm
2
3
4
5
6
7
8
Frequency (GHz)
Output Power vs. Input Power vs. Freq.
30
28
2 GHz
26 4 GHz
24
6 GHz
22
20
18
16
14
12
10
-15 -10
Temp = 25 °C
-5
0
5
10
15
20
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
30
28
-40 °C
26
25 °C
24
85 °C
22
20
18
16
14
12
10
-15 -10
-5
0
5
10
Input Power (dBm)
4 GHz
15
20
24
P1dB vs. Frequency vs. V_D
Temp = 25 °C
23
22
21
20
12 V
19
10 V
8V
18
17
16
2
3
4
5
6
Frequency (GHz)
P1dB vs. Frequency vs. Temperature
24
23
22
21
20
19
85 °C
18
25 °C
-40 °C
17
16
2
3
4
5
6
Frequency (GHz)
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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