TGA2611-SM_15 Datasheet, PDF (3/14 Pages) TriQuint Semiconductor – 2 6 GHz GaN LNA

Thermal and Reliability Information
Parameter
Test Conditions
Thermal Resistance (θJC) ⁽¹⁾
Channel Temperature (TCH) (Under RF drive)
Median Lifetime (TM)
Tbase = 85 °C, VD = 10 V (CW)
IDQ = 100 mA, ID_Drive = 195 mA
PIN = 10 dBm, POUT = 28 dBm,
Freq = 4 GHz, PDISS = 1.3 W
Notes:
1. Thermal resistance measured at back of the package.
TGA2611-SM
2-6 GHz GaN LNA
Value
19
110
2.3 x 10^11
Units
ºC/W
°C
Hrs
Test Conditions: VD = 40 V; Failure Criteria is 10% reduction in ID_MAX
22
Thermal Resistance vs. P_DISS
T_BASE = 85 ⁰C, CW
21
20
19
18
17
16
0.5
1.0
1.5
2.0
2.5
3.0
P_DISS (W)
1.5
P_DISS vs. Frequency vs. T_BASE
V_D = 10 V, I_DQ = 100 mA, P_IN = 10 dBm, CW
1.4
1.3
1.2
1.1
85 °C
25 °C
1.0
-40 °C
0.9
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz)
Preliminary Datasheet: Rev - 01-29-15
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