TGA2611-SM_15 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 2 6 GHz GaN LNA

Applications
 Commercial and Military Radar
 Communications
TGA2611-SM
2-6 GHz GaN LNA
Product Features
 Frequency Range: 2 – 6 GHz
 NF: 1.0 dB
 OTOI: 30 dBm at Pout/tone = 18 dBm
 Small Signal Gain: 22 dB
 Return Loss: >10 dB
 P1dB: 18 dBm, PSAT = 26 dBm at PIN = 10 dBm
 Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V
 Package Dimensions: 4.0 x 4.0 x 0.85 mm
Functional Block Diagram
General Description
TriQuint’s TGA2611-SM is a packaged broadband Low
Noise Amplifier fabricated on TriQuint’s TQGaN25
0.25 um GaN on SiC process. The TGA2611-SM
operates from 2 to 6 GHz and typically provides
>18 dBm P1dB, >22 dB of small signal gain and
30 dBm of OTOI with 1.0 dB NF. In addition to the high
overall electrical performance, this GaN amplifier also
provides a high level of input power robustness which
allows more flexibility in designing the receive chain
circuit protection.
The TGA2611-SM is available in a low cost, surface
mount 20-lead 4x4 mm plastic QFN. It is ideally suited
to support both radar and satellite communication
applications.
Both RF ports have intergraded DC blocking caps and
are fully matched to 50 ohms.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1, 2, 4-9, 11, 12, 14,
15, 17-20
3
10
13
16
Symbol
N/C
RFIN
VG
RFOUT
VD
Ordering Information
Part
ECCN Description
TGA2611-SM
EAR99
2 – 6 GHz GaN LNA
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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