T1G3000532-SM_15 Datasheet, PDF (4/21 Pages) TriQuint Semiconductor – 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor

T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
RF Characterization – EVB Performance at 3.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol
G_LIN
P_3dB
DE_3dB
G_3dB
Parameter
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Min Typical Max
15.8
4.38
48.9
12.8
Units
dB
W
%
dB
RF Characterization – Mismatch Ruggedness at 3.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA
Driving input power is determined at 1dB CW compression under matched condition at EVB output connector.
Symbol Parameter
VSWR Impedance Mismatch Ruggedness
Typical
10:1
Datasheet: Rev 001- 06-13-14
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