T1G3000532-SM_15 Datasheet, PDF (1/21 Pages) TriQuint Semiconductor – 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor

T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: 30 MHz to 3.5 GHz
• Output Power (P_3dB): 5.7 W at 3.0 GHz
• Linear Gain: 15.7 dB at 3 GHz
• Typical PAE_3dB: 64.7% at 3GHz
• Operating Voltage: 32 V
• Low thermal resistance package
• CW and Pulse capable
Functional Block Diagram
General Description
Ω- The TriQuint T1G3000532-SM is a 5W (P_3dB), 50 input
matched discrete GaN on SiC HEMT which operates
from 30MHz to 3.5 GHz. The device is constructed with
TriQuint’s proven TQGaN25 process, which features
advanced field plate techniques to optimize power and
efficiency at high drain bias operating conditions. This
optimization can potentially lower system costs in terms
of fewer amplifier line-ups and lower thermal
management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
20 - 21
5
11
Back side
Label
V_D / RF OUT
V_G / RF IN
Off-chip Shunt Cap for Low-
Frequency Gain
Source
Ordering Information
Part
ECCN Description
T1G3000532-SM EAR99
QFN Packaged Part
T1G3000532-SM-
EVB
EAR99
0.5 – 3 GHz EVB
Datasheet: Rev 001- 06-13-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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