T1G3000532-SM_15 Datasheet, PDF (12/21 Pages) TriQuint Semiconductor – 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor

T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
Typical Performance – Power Tuned^(1,2,3)
Notes:
1. Pulsed signal with 100uS pulse width and 20% duty cycle
2. See page 18 for load pull and source pull reference planes.
3. Performance is measured at device reference planes.
T1G3000532-SM Gain and PAE vs. Output Power
1GHz, Vds =32V, Idq =25mA, 100uS, 20%, Power Tuned
20
80
19
72
18
64
17
56
16
48
15
Zs = 50.6-j2.83Ω
40
Zl = 57.8+j21.0Ω
14
32
13
Gain
24
PAE
12
16
11
8
10
0
24
26
28
30
32
34
36
38
Output Power [dBm]
T1G3000532-SM Gain and PAE vs. Output Power
2GHz, Vds =32V, Idq =25mA, 100uS, 20%, Power Tuned
18
60
17.5
55
17
50
16.5
45
16
Zs = 51.8-j0.59Ω
40
Zl = 54.5+j21.4Ω
15.5
35
15
30
14.5
Gain
25
PAE
14
20
13.5
15
13
10
26
28
30
32
34
36
38
40
Output Power [dBm]
T1G3000532-SM Gain and PAE vs. Output Power
1.5GHz, Vds =32V, Idq =25mA, 100uS, 20%, Power Tuned
20
70
19
65
18
60
17
55
16
15
Zs = 50.3+j0.87Ω
Zl = 53.8+j36.1Ω
14
13
50
45
Gain
40
PAE
35
12
30
11
25
10
20
26
28
30
32
34
36
38
Output Power [dBm]
T1G3000532-SM Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =25mA, 100uS, 20%, Power Tuned
17
60
16.5
55
16
50
15.5
45
15
40
14.5
14
Zs = 51.1-j1.59Ω
Zl = 41.3+j18.5Ω
13.5
35
30
Gain
PAE
25
13
20
12.5
15
12
10
22
24
26
28
30
32
34
36
38
Output Power [dBm]
15
14.5
14
13.5
13
12.5
12
11.5
11
10.5
10
17
T1G3000532-SM Gain and PAE vs. Output Power
3.5GHz, Vds =32V, Idq =25mA, 100uS, 20%, Power Tuned
Zs = 48.9-j0.78Ω
Zl = 38.2+j19.4Ω
Gain
PAE
19
21
23
25
27
29
31
33
35
Output Power [dBm]
50
45
40
35
30
25
20
15
10
5
0
37
Datasheet: Rev 001- 06-13-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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