TGS4310_15 Datasheet, PDF (3/9 Pages) TriQuint Semiconductor – 13-19GHz 5W SPDT Switch

TGS4310
13-19GHz 5W SPDT Switch
Thermal and Reliability Information
Parameter
Conditions
Value
Units
Thermal Resistance (θ_JC) ⁽¹⁾
Channel Temperature (T_CH)
Median Lifetime (T_M)
T_BASE = 85 °C, V_DD = 7 V, V_BIT = 0/7 V, CW,
Frequency = 18 GHz, P_IN = 38 dBm (6.31W), Insertion Loss
= 1.2 dB, P_OUT = 36.8 dBm (4.786W), P_DISS = 1.523 W
40
146
1.6E+6
ºC/W
°C
Hrs
Notes:
1. MMIC soldered to 20 mil thick Cu-Mo carrier plate using 1.5 mil thick AuSn solder. Thermal resistance is determined from
the channel to the back of the carrier plate (fixed 85 °C temperature).
Median Lifetime
Test Conditions: 7 V; Failure Criteria = 10% reduction in I _MAX
Median Lifetime vs. Channel Temperature
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
FET5
1E+03
25
50
75 100 125 150 175 200
Channel Temperature, T_CH (°C)
Power Dissipation vs. Input Power vs. Freq.
2.0
V_DD = 7 V, V_BIT = 0/7 V
1.8
1.6
1.4
12 GHz
1.2
13 GHz
1.0
14 GHz
15 GHz
0.8
16 GHz
0.6
17 GHz
0.4
18 GHz
0.2
0.0
16 18 20 22 24 26 28 30 32 34 36 38
P_IN (dBm)
Preliminary Datasheet: Rev - 07-18-14
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