TGS4304_15 Datasheet, PDF (2/10 Pages) TriQuint Semiconductor – High Power Ka-Band Absorptive SPDT Switch

TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
V_C Control Voltage
I_C Control Current
P_IN Input Continuous Wave Power
T_M Mounting Temperature (30 Seconds)
T_STG Storage Temperature
Value
-5V to +25V
34 mA
35 dBm
320 ⁰C
-65 to 150 ⁰C
May 2, 2008
TGS4304
Notes
2/
2/
1/ These ratings represent the maximum operable values for this device.
2/ V_C and I_C are per bias pad.
3/ Operation above 30dBm requires control voltages above +7.5V.
Symbol
TABLE II
RF CHARACTERIZATION TABLE
(T_A = 25°C, Nominal)
(V_A = +5V, I_A = 0mA, V_B = -4V, I_B = 30mA)
Parameter
Test Conditions
Typ
Units Notes
IL
Insertion Loss
F = 32 – 34 GHz
F = 34 – 37 GHz
F = 37 – 40 GHz
1.3
0.9
dB
1.3
RL
Return Loss
F = 32 – 40 GHz
10
dB
P1dB
Output Power @
1dB Gain
Compression
V_C = +5 V
V_C = +7.5 V
Vc = +10 V
V_C = +20 V
31
33
34
dBm
1/
34.5
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
1/ Frequency = 30GHz
2
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