TC1401N Datasheet, PDF (5/5 Pages) Transcom, Inc. – 0.5 W High Linearity and High Efficiency GaAs Power FETs

SMALL SIGNAL MODEL, V_DS = 8 V, I_DS = 120 mA
SCHEMATI
PARAMETERS
Lg Rg
Cgd
Rd Ld
Lg
0.071 nH
Cgs
Gm
Cds
Rds
Ri
T
Rg
1.27 Ohm
Cgs
2.36 pF
Ri
2.01 Ohm
Cgd
0.069 pF
Rs
Gm
253 mS
T
3.9 psec
Ls
TC1401N
REV5_20070502
Rs
1.68 Ohm
Ls
0.013 nH
Cds
0.297 pF
Rds
103.7 Ohm
Rd
1.75 Ohm
Ld
0.013 nH
LARGE SIGNAL MODEL, V_DS = 8 V, I_DS = 120 mA
SCHEMATI
TOM2 MODEL PARAMETERS
Lg Rg
Cgs
Ris
Cgd Rid
Id
Cds
Rs
Ls
Rd Ld
Rdb
Cbs
VTO
ALPHA
BETA
GAMMA
DELTA
Q
NG
ND
TAU
RG
RD
RS
IS
N
VBI
VDELTA
-1.812 V VMAX
14.13
CGD
0.354
CGS
0.0228
CDS
0.1565
RIS
0.88
RID
0.1
VBR
0.01
RDB
3.9 ps CBS
1.2733 Ohm TNOM
1.32 Ohm LS
1.675 Ohm LG
1E-11 mA LD
1
AFAC
1 V NFING
0.2 V
0.5 V
0.0691 pF
3.9867 pF
0.278 pF
2.005 Ohm
0.0001 Ohm
15 V
119.667 Ohm
4.7433 pF
25 °C
0.0131 nH
0.0715 nH
0.013 nH
1
1
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
5/5