TC1401N Datasheet, PDF (2/5 Pages) Transcom, Inc. – 0.5 W High Linearity and High Efficiency GaAs Power FETs

ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
V_DS
V_GS
I_DS
P_in
P_T
T_CH
T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
I_DSS
26 dBm
1.9 W
175 °C
- 65 °C to +175 °C
CHIP DIMENSIONS
380± 12
D
470± 12
S GS
TC1401N
REV5_20070502
Units: Micrometers
Chip Thickness: 76
Gate Pad: 59.5 x 76.0
Drain Pad: 86.0 x 76.0
Source Pad: 80 x 86
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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