TC1401N Datasheet, PDF (1/5 Pages) Transcom, Inc. – 0.5 W High Linearity and High Efficiency GaAs Power FETs

TC1401N
REV5_20070502
0.5 W High Linearity and High Efficiency GaAs Power FETs
FEATURES
! 0.5W Typical Power at 12 GHz
! Linear Power Gain: G_L = 9 dB Typical at 12 GHz
! High Linearity: IP3 = 37 dBm Typical at 12 GHz
! High Power Added Efficiency (PAE): 40%
! No Via holes in the source pads
! Non-Via Hole Source for Self-Bias Application
! Breakdown Voltage: BV_DGO ≥ 15 V
! Lg = 0.35 µm, Wg = 1.2 mm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1401N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity
and high Power Added Efficiency. The device has no via holes in the source pads. The short gate length
characteristic enables the device to be used in a circuit up to 20GHz. All devices are 100% DC tested to assure
consistent quality. Backside gold plating is compatible with standard AuSn die-attach.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
MIN TYP MAX UNIT
P_1dB Output Power at 1dB Gain Compression Point , f = 12GHz,V_DS = 8 V, I_DS = 120 mA
26.5 27
dBm
G_L Linear Power Gain, f = 12GHz,V_DS = 8 V, I_DS = 120 mA
9
dB
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 12GHz,V_DS = 8 V, I_DS = 120 mA, P_SCL = 14 dBm
37
dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 12GHz
40
%
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
300
mA
200
mS
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 2.4 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =0.6 mA
-1.7*
15 18
Volts
Volts
R_th Thermal Resistance
Note: * For the tight control of the pinch-off voltage . TC1401N’s are divided into 3 groups:
(1)TC1401NP0710 : Vp = -1.5V to -1.9V (2) TC1401NP0811 : Vp = -1.6V to -2.0V
(3)TC1401NP0912 : Vp = -1.7V to -2.1V
In addition, the customers may specify their requirements.
30
°C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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