TS3300 Datasheet, PDF (3/14 Pages) Touchstone Semiconductor Inc – 0.6-4.5VIN, 1.8-5.25VOUT, 3.5-uA, Low Input Voltage, High-Efficiency Boost + LDO

TS3300
ELECTRICAL CHARACTERISTICS
VBI = 1.2V, VBO = 3V, V_Bതതത_Eതത_Nതത = LOW, IBO= 20mA, L = 10µH, CBO = 22µF unless otherwise noted. Values are at TA = 25°C unless otherwise noted.
See Note 1.
PARAMETER
Minimum Input Boost
Voltage
Maximum Input Boost
Voltage
Output Boost Voltage
Range
Current Measured at BO
Current Measured at BI
Current Measured at BO
Current Measured at BI
Efficiency
Boost Shutdown Supply
Current
Boost Feedback Voltage
during operation
Boost Feedback Pin
Current
Anti-Crush Feedback
Voltage
Anti-Crush Feedback
Voltage Hysteresis
Boost Enable Threshold
Boost Enable Hysteresis
Inductor Peak Current
Inductor Valley Current
N-channel ON Resistance
P-channel ON Resistance
SYMBOL
VBI_MIN
VBI_MAX
VBO
IB_Q
Eff
ISHUTDOWN
VBO FB
IBO FB
VBI FB
VBI FB_HYST
V_Bതതത_Eതത_Nതത
V_Bതതത_Eതത_Nത_{_HYST}
IPK
IV
RdsN-CH
RdsP-CH
CONDITIONS
BOOST REGULATOR
IBO = 0mA. TA=25ºC
Guaranteed by design
IBO = 0mA,
VBO FB = 0.6V
TA =25°C
IBO = 0mA,
VBO FB = 0.6V
-40°C < TA < +85°C
VBI= 1.2V, VBO=1.8, IBO=30mA
Measured at BI.
V_Bതതത_Eതത_Nതത = VBI
V_Bതതത_Eതത_Nതത = 0V
TA =25°C
Output voltage accuracy: ± 4%
VBI ≥ 0.6V
VIL
VIH
No Load
MIN
4.5
1.8
0.489
0.363
0.2
365
TYP
0.6
3.5
0.07
84
0.505
±0.1
0.392
50
200
10
0.27
0.48
MAX
0.75
5.25
6
0.9
100
UNITS
V
V
V
µA
µA
µA
µA
%
nA
0.521
V
±1
nA
0.425
V
mV
V
VBI -0.05
V
mV
mA
mA
Ω
Ω
TS3300DS r1p0
Page 3
RTFDS