TC55V4000ST-70 Datasheet, PDF (8/10 Pages) Toshiba Semiconductor – 524,288-WORD BY 8-BIT STATIC RAM

TC55V4000ST-70,-85
DATA RETENTION CHARACTERISTICS (Ta = −40° to 85°C)
SYMBOL
PARAMETER
MIN
V_DH
Data Retention Supply Voltage
1.5
I_DDS2
Ta = −40~40°C

V_DH = 3.0 V
Standby Current
Ta = −40~85°C

V_DH = 3.6 V Ta = −40~85°C

t_CDR
t_R
Chip Deselect to Data Retention Mode Time
Recovery Time
0
t_RC(See ^Note)
Note: Read cycle time
TYP






MAX
3.6
1
5
7


UNIT
V
µA
ns
ns
CE CONTROLLED DATA RETENTION MODE
V_DD
V_DD
DATA RETENTION MODE
4.5 V
V_IH
CE
GND
(See Note)
t_CDR
V_DD − 0.2 V
(See Note)
t_R
Note: When CE is operating at the VIH level (2.2V), the standby current is given by IDDS1 during the transition
of VDD from 3.6 to 2.4V.
2001-11-30 8/10