TC55V4000ST-70 Datasheet, PDF (3/10 Pages) Toshiba Semiconductor – 524,288-WORD BY 8-BIT STATIC RAM

TC55V4000ST-70,-85
DC RECOMMENDED OPERATING CONDITIONS (Ta = −40° to 85°C)
SYMBOL
PARAMETER
V_DD
Power Supply Voltage
V_IH
Input High Voltage
V_IL
Input Low Voltage
V_DH
Data Retention Supply Voltage
*: −3.0 V when measured at a pulse width of 50 ns
MIN
2.3
2.2
−0.3*
1.5
2.3 V~3.6 V
TYP
MAX
3.0
3.6

V_DD + 0.3

V_DD × 0.22

3.6
UNIT
V
V
V
V
DC CHARACTERISTICS (Ta = −40° to 85°C, V_DD = 2.3 to 3.6 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN TYP MAX UNIT
I_IL
Input Leakage
Current
V_IN = 0 V~V_DD
I_OH
Output High Current V_OH = V_DD − 0.5 V
  ±1.0 µA
−0.5   mA
I_OL
Output Low Current V_OL = 0.4 V
I_LO
Output Leakage
Current
CE = V_IH or OE = V_IH or R/W = V_IL, V_OUT = 0 V~V_DD
2.1   mA
  ±1.0 µA
l_DDO1
l_DDO2
l_DDS1
Operating Current
CE = V_IL and R/W = V_IH,
min
I_OUT = 0 mA,
Other Input = V_IH/V_IL
CE = 0.2 V and
R/W = V_DD − 0.2 V,
V_DD =
3.0 V ± 10%
t_cycle
1 µs
min
I_OUT = 0 mA,
Other Input = V_DD − 0.2 V/0.2 V
1 µs
  50
mA
  10
  45
mA
 5
CE = V_IH
  3 mA
V_DD =
Ta = 25°C
  0.6
3.0 V ± 10% _{Ta = −40~85°C }

6
l_DDS2
Standby Current
CE = V_DD − 0.2 V,
V_DD = 1.5 V~3.6 V
V_DD =
Ta = 25°C
  0.7
3.3 V ± 0.3 V _{Ta = −40~85°C }

7
µA
Ta = 25°C
 0.05 0.5
V_DD = 3 V Ta = −40~40°C   1
Ta = −40~85°C   5
CAPACITANCE (Ta = 25°C, f = 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
C_IN
Input Capacitance
V_IN = GND
C_OUT
Output Capacitance
V_OUT = GND
Note: This parameter is periodically sampled and is not 100% tested.
MAX
10
10
UNIT
pF
pF
2001-11-30 3/10