TLP270D Datasheet, PDF (7/8 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET / Photo-Transistor

TLP270D
Package (common)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Total package power dissipation
P_T
Storage temperature range
T_stg
Operating temperature range
T_opr
Lead soldering temperature(10s)
T_sol
Isolation voltage
(AC, 1min., R.H.≤ 60%)
(Note 1)
BV_S
650
-55~100
-20~85
260
1500
mW
°C
°C
°C
Vrms
(Note 1): Device considered a two-terminal device: Pins1, 2, 3, 4, 5, 6, 7 and 8 shorted together and pins 10, 11, 12,
13, 14 and 15 shorted together.
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
C_S
R_S
BV_S
Test Condition
V_S=0, f=1MHz
V_S=500V, R.H.≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min. Typ. Max. Unit
―
0.8
―
pF
5 ´ 10¹⁰ 10¹⁴
―
W
1500 ―
―
Vrms
― 3000 ―
―
3000
―
Vdc
7
2002-09-25