TLP270D Datasheet, PDF (6/8 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET / Photo-Transistor

Darlington Transistor
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Rating
Unit
30
V
30
V
10
V
0.15
A
20
mA
350
mW
125
°C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Collector off current
Emitter off current
Collector-emitter breakdown
voltage
DC current gain
Collector-emitter saturation
voltage
Switching
time
Turn-on time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V_(BR)CEO
h_FE
V_CE(sat)
V_CB=30V, I_E=0
V_EB=10V, I_C=0
I_C=10mA, I_B=0
V_CE=2V, I_C=150mA
I_C=0.15A, I_B=1mA
t_on
t_stg
I_B=1mA, V_CC=15V,
R_L=15W
t_f
Bridge Rectifier
Maximum Ratings (Ta = 25°C)
Characteristic
Repetitive peak reverse voltage
Average output rectified current
Peak one cycle surge forward
current
Junction temperature
Symbol
V_RRM
I_O
I_FSM
T_j
Rating
Unit
30
V
0.15
A
0.5
A
125
°C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Repetitive peak reverse
current
Symbol
V_FM
I_RRM
Test Condition
I_FM=0.12A
V_RRM=rated
TLP270D
Min. Typ. Max. Unit
―
―
10
mA
―
―
10
mA
30
―
―
V
4000 ―
―
―
―
1.5
V
― 0.20 ―
―
0.6
―
ms
―
0.3
―
Min. Typ. Max. Unit
―
―
1.7
V
―
―
10
mA
6
2002-09-25