TLP270D Datasheet, PDF (4/8 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET / Photo-Transistor

Photocoupler (AC-input transistor output)
Maximum Ratings (Ta = 25°C)
Characteristic
Forward current
Forward current derating
(Ta ≥ 25°C)
Pulse forward current
(100ms pulse,100pps)
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation
derating(Ta ≥ 25°C) (1 circuit)
Junction temperature
Symbol
I_F
∆I_F / °C
I_FP
T_j
V_CEO
V_ECO
I_C
P_C
∆P_C / °C
T_j
Rating
±50
-0.5
1
125
80
7
50
150
-1.5
125
Unit
mA
mA / °C
A
°C
V
V
mA
mW
mW / °C
°C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Capacitance
Collector-emitter
breakdown voltage
Emitter-collector
breakdown voltage
Collector dark current
Capacitance
Symbol
Test Condition
V_F
I_F=±10mA
C_T
V=0, f=1MHz
V_(BR)CEO I_C=0.5mA
V_(BR)ECO I_E=0.1mA
V_CE=48V
(ambient light: 100 lx)
I_D
V_CE=48V, T_a=85°C
(ambient light: 100 lx)
C_CE
V=0, f=1MHz
TLP270D
Min. Typ. Max. Unit
1.0 1.15 1.3
V
―
60
―
pF
80
―
―
V
7
―
―
V
― 0.01 0.1
mA
―
(2) (20)
―
2
50
mA
―
(4) (50)
―
10
―
pF
4
2002-09-25