TC55V8512FT-12 Datasheet, PDF (7/10 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55V8512J/FT-12,-15
Note:
(1)
(2)
(3)
(4)
(5)
(6)
Operating temperature (Ta) is guaranteed for transverse air flow exceeding 400 linear feet per minute.
WE remains HIGH for the Read Cycle.
If CE goes LOW coincident with or after WE goes LOW, the outputs will remain at high impedance.
If CE goes HIGH coincident with or before WE goes HIGH, the outputs will remain at high
impedance.
If OE is HIGH during the write cycle, the outputs will remain at high impedance.
The parameters specified below are measured using the load shown in Fig.1.
(A) tCOE, tOEE, tOEW^{ŋŋŋŋŋŋŋŋŋŋŋŋŋŋŋŋŋ} Output Enable Time
(B) tCOD, tODO, tODW ^{ŋŋŋŋŋŋŋŋŋŋŋŋŋŋŋŋ} Output Disable Time
CE , OE
WE
D_OUT
(A)
Hi-Z
0.2 V
0.2 V
INDETERMINATE
VALID DATA OUT
(B)
0.2 V
Hi-Z
0.2 V
INDETERMINATE
2001-12-19 7/10