TC51WHM616AXBN70 Datasheet, PDF(7/11 Page) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

TC51WHM616AXBN70 Datasheet, PDF (7/11 Pages) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

◁

WRITE CYCLE 3 (UB, LB CONTROLLED) (See Note 8)

TC51WHM616AXBN65,70

Address

A0 to A21

CE1

CE2

UB , LB

DOUT

I/O1 to I/O16

DIN

I/O1 to I/O16

tWC

tAW

tAS

tWP

tWR

tCW

tCH

tCW

tBW

Hi-Z

tBE tODW

tCOE

(See Note 9)

Hi-Z

tDS

tDH

VALID DATA IN

2002-08-22 7/11

▷