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| TC51WHM616AXBN70 Datasheet, PDF (3/11 Pages) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |||
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ABSOLUTE MAXIMUM RATINGS (See Note 1)
SYMBOL
RATING
VDD
VIN
VOUT
Topr.
Tstrg.
Tsolder
PD
IOUT
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (10 s)
Power Dissipation
Short Circuit Output Current
TC51WHM616AXBN65,70
VALUE
â1.0 to 3.6
â1.0 to 3.6ç
â1.0 to 3.6
â25 to 85
â55 to 150
260
0.6
50
UNIT
V
V
V
°C
°C
°C
W
mA
DC RECOMMENDED OPERATING CONDITIONS (Ta = â25°C to 85°C)
SYMBOL
PARAMETER
VDD
Power Supply Voltage
VIH
Input High Voltage
VIL
Input Low Voltage
MIN
TYP.
MAX
UNIT
2.6
2.75
3.3
2.0
â0.3*

VDD + 0.3*
V

0.4
* : VIH(Max) VDD+1.0 V with 10 ns pulse width
VIL(Min) -1.0 V with 10 ns pulse width
DC CHARACTERISTICS (Ta = â25°C to 85°C, VDD = 2.6 to 3.3 V) (See Note 3 to 4)
SYMBOL
PARAMETER
TEST CONDITION
MIN TYP. MAX UNIT
IIL
ILO
VOH
VOL
IDDO1
IDDO2
IDDS
IDDSD
Input Leakage Current
VIN = 0 V to VDD
â1.0  +1.0 µA
Output Leakage Current
Output disable, VOUT = 0 V to VDD
â1.0  +1.0 µA
Output High Voltage
IOH = â 0.5 mA
2.0 

V
Output Low Voltage
IOL = 1.0 mA
  0.4
V
Operating Current
CE1 = VIL
CE2 = VIH, IOUT = 0 mA
tRC = min


50
mA
Page Access Operating Current
CE1 = VIL, CE2 = VIH,
Page add. cycling, IOUT = 0 mA
tPC = min


25
mA
Standby Current(MOS)
CE1 = VDD â 0.2 V, CE2 = VDD â 0.2 V
  100 µA
Deep Power-down Standby Current CE2 = 0.2 V

5
µA
CAPACITANCE (Ta = 25°C, f = 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
CIN
Input Capacitance
VIN = GND
COUT
Output Capacitance
VOUT = GND
Note: This parameter is sampled periodically and is not 100% tested.
MAX
10
10
UNIT
pF
pF
2002-08-22 3/11
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