TC5117400BSJ Datasheet, PDF (7/21 Pages) Toshiba Semiconductor – 4,194,304 WORD X 4 BIT DYNAMIC RAM

DR16040794
Standard DRAM
TC5117400BSJ/BST-60/70
Electrical Characteristics and Recommended AC Operating Conditions in the Test Mode
TC5117400BSJ/BST
SYMBOL
PARAMETER
-60
-70
UNIT NOTES
MIN MAX. MIN MAX
t_RC
t_PC
t_RAC
t_CAC
t_AA
t_CPA
t_RAS
t_RASP
t_RSH
t_CSH
t_RHCP
t_CAS
t_RAL
Random Read or Write Cycle Time
Fast Page Mode Cycle Time
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Access Time from CAS Precharge
RAS Pulse Width
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
CAS Hold Time
CAS Precharge to RAS Hold
CAS Pulse Width
Column Address to RAS Lead Time
115
-
135
-
ns
45
-
50
-
ns
-
65
-
75
ns
9, 14,
15
-
20
-
25
ns 9, 14
-
35
-
40
ns 9, 15
-
40
-
45
ns
9
65 10,000 75 10,000 ns
65 200,000 75 200,000 ns
20
-
25
-
ns
65
-
75
-
ns
40
-
45
-
ns
20 10,000 25 10,000 ns
35
-
40
-
ns
Capacitance (V_CC = 5V ± 10%, f = 1MHz, Ta = 0 ~ 70°C)
SYMBOL
PARAMETER
C_I1 Input Capacitance (A0~A10)
C_I2 Input Capacitance (RAS, CAS, WE, OE)
C_O Input Capacitance (I/O1~I/O4)
MIN MAX UNIT
-
5
-
7
P^F
-
7
PRELIMINARY
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
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