TC5117400BSJ Datasheet, PDF (6/21 Pages) Toshiba Semiconductor – 4,194,304 WORD X 4 BIT DYNAMIC RAM

TC5117400BSJ/BST-60/70
Standard DRAM
Electrical Characteristics and Recommended AC Operating Conditions (Cont)
TC5117400BSJ/BST
SYMBOL
PARAMETER
-60
-70
MIN MAX. MIN MAX
t_WCH
t_WP
t_RWL
t_CWL
t_DS
t_DH
t_REF
t_WCS
t_CWD
t_RWD
t_AWD
t_CPWD
t_CSR
t_CHR
t_RPC
t_CPT
t_ROH
t_OEA
t_OED
t_OEZ
t_OEH
t_ODS
t_WTS
t_WTH
t_WRP
t_WRH
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data Set-Up Time
Data Hold Time
Refresh Period
Write Command Set-Up Time
CAS to WE Delay Time
RAS to WE Delay Time
Column Address to WE Delay Time
CAS Precharge to WE Delay Time
CAS Set-Up Time
(CAS before RAS Cycle)
CAS Hold Time
(CAS before RAS Cycle)
RAS to CAS Precharge Time
CAS Precharge Time
(CAS before RAS Counter Test Cycle
RAS Hold Time referenced to OE
OE Access Time
OE to Data Delay
Output buffer turn off Delay Time from OE
OE Command Hold Time
Output Disable Setup Time
Write Command Set-up Time
(Test Mode In)
Write Command Hold Time
(Test Mode In)
WE to RAS Precharge Time
(CAS before RAS Cycle)
WE to RAS Hold Time
(CAS before RAS Cycle)
10
-
15
-
10
-
15
-
15
-
20
-
15
-
20
-
0
-
0
-
10
-
15
-
-
32
-
32
0
-
0
-
40
-
45
-
85
-
95
-
55
-
60
-
60
-
65
-
5
-
5
-
10
-
15
-
5
-
5
-
20
-
30
-
10
-
10
-
-
15
-
20
15
-
15
-
0
15
0
15
10
-
15
-
0
-
0
-
10
-
10
-
10
-
10
-
10
-
10
-
10
-
10
-
UNIT
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
12
12
13
13
13
13
13
10
DR16040794
6
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
PRELIMINARY