TC5117400BSJ Datasheet, PDF (4/21 Pages) Toshiba Semiconductor – 4,194,304 WORD X 4 BIT DYNAMIC RAM

TC5117400BSJ/BST-60/70
Standard DRAM
Recommended DC Operating Conditions (Ta = 0 ~ 70°C)
SYMBOL
PARAMETER
MIN.
V_CC
Power Supply Voltage
V_IH
Input High Voltage
V_IL
Input Low Voltage
*V_CC + 2.0V at pulse width ≤ 20ns (pulse width is measured at V_CC).
**-2.0V at pulse width ≤ 20ns (pulse width is measured at V_SS).
4.5
2.4
-0.5**
TYP.
MAX.
UNIT NOTE
5.0
5.5
V
2
-
V_CC + 0.5* V
2
-
0.8
V
2
DR16040794
DC Electrical Characteristics (V_CC = 5V ± 10%, Ta = 0 ~ 70°C)
SYMBOL
PARAMETER
|_CC1
|_CC2
|_CC3
|_CC4
|_CC5
|_CC6
|_{I (L)}
|_{O (L)}
V_OH
V_OL
OPERATING CURRENT
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t_RC=t_RC MIN)
STANDBY CURRENT
Power Supply Standby Current
(RAS=CAS=V_IH)
RAS ONLY REFRESH CURRENT
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS=V_IH: t_RC=t_RC MIN.)
FAST PAGE MODE CURRENT
Average Power Supply Current, Fast Page Mode
(RAS =V_IL, CAS, Address Cycling: t_PC=t_PC MIN.)
STANDBY CURRENT
Power Supply Standby Current
(RAS=CAS=V_CC-0.2V)
CAS BEFORE RAS REFRESH CURRENT
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS, Cycling: t_RC=t_RC MIN.)
INPUT LEAKAGE CURRENT
Input Leakage Current, any input
(0V<V_IN<V_CC, All Other Pins Not Under Test=0V)
OUTPUT LEAKAGE CURRENT
(D_OUT is disabled, (0V≤V_OUT<V_CC)
OUTPUT LEVEL
Output “H” Level Voltage (I_OUT=-5mA)
OUTPUT LEVEL
Output “L” Level Voltage (I_OUT=4.2mA)
TC5117400BSJ/BST-60
TC5117400BSJ/BST-70
TC5117400BSJ/BST-60
TC5117400BSJ/BST-70
TC5117400BSJ/BST-60
TC5117400BSJ/BST-70
TC5117400BSJ/BST-60
TC5117400BSJ/BST70
MIN MAX UNIT NOTE
-
-
110
mA
95
3,4
5
–
2
mA
-
110
mA
3, 5
-
95
-
-
70
60
mA
3,4
5
–
1
mA
-
110
-
95
mA
3, 5
-10
10
µA
-10
10
µA
2.4
-
V
-
0.4
V
4
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
PRELIMINARY