HN2E04F Datasheet, PDF (7/8 Pages) Toshiba Semiconductor – MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application

Q1, Q2 Common
500
P_C* – Ta
400
300
200
100
0
0
25
50
75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
*Total Rating.
HN2E04F
7
2007-11-22