HN2E04F Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application

Q1 (Transistor) Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition Frequency
Collector Output Capacitance
Noise figure
I_CBO
I_EBO
h_FE*
V_CE(sat)
f_T
C_ob
NF
― V_CB = −120V, I_E = 0
― V_EB = −5V, I_C = 0
― V_CE =− 6V, I_C = −2mA
― I_C =−10mA, I_B =−1mA
― V_CE = −6V, I_C =−1mA
― V_CB =−10V, I_E = 0,f=1MHz
V_CE = −6 V, I_C = −0.1 mA
―
f = 1 kHz,R_g = 10 kΩ
*: h_FE Classifications GR(G):200~400 , BL(L):350~700 ( )Marking Symbol
HN2E04F
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
200
―
700
―
― −0.3 V
―
100
― MHz
―
4
―
pF
―
1.0
―
dB
Q2 (Diode) Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― I_F = 10mA (fig.1)
Min Typ. Max Unit
― 0.62 ―
― 0.75 ―
V
― 0.98 1.20
―
―
0.1
μA
―
―
0.5
―
0.5
―
pF
―
1.6
―
ns
Marking
Type Name
32G
h_FE RANK
Equivalent Circuit (Top View)
654
Q1
Q2
123
2
2007-11-22