HN2E04F Datasheet, PDF (4/8 Pages) Toshiba Semiconductor – MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application

Q1
I_C – V_CE
−5
COMMON EMITTER
−10
Ta = 25°C
−4
−9
−8
−7
−3
−6
−5
−2
−4
−3
−1
−2
IB = −1 μA
0
0
0
−2
−4
−6
−8
−10
COLLECTOR EMITTER VOLTAGE V_CE (V)
5000
3000
1000
500
300
h_FE – I_C
COMMON EMITTER
VCE = −6 V
Ta = 100°C
25
−25
100
−0.1
−0.3
−1
−3
−10
−30
COLLECTOR CURRENT I_C (mA)
−1
−0.5
−0.3
−0.1
−0.05
−0.03
V_{CE (sat)} – I_C
COMMON EMITTER
IC/IB = 10
Ta = 100°C
25
−25
−0.01
−0.1
−0.3
−1
−3
−10
−30
COLLECTOR CURRENT I_C (mA)
HN2E04F
I_C – V_BE
−30
COMMON EMITTER
−25 ^{VCE = −6 V}
−20
−15
Ta = 100°C 25
−25
−10
−5
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
BASE-EMITTER VOLTAGE V_BE (V)
C_ob – V_CB
10
IE = 0
f = 1 MHz
5
Ta = 25°C
3
1
−1
−3
−10
−30
−100
COLLECTOR-BASE VOLTAGE V_CB (V)
4
2007-11-22