TCD2560D Datasheet, PDF (6/15 Pages) Toshiba Semiconductor – TOSHIBA CCD Image Sensor CCD (charge coupled device)

TCD2560D
7) I value calculated using the above procedure is observed 2 times larger than that measured
relative to the ground level. So we specify random noise as follows.
ND^{s =}
1
s
2
Operating Condition
Characteristics
Symbol
Min Typ. Max Unit
Clock pulse voltage
Shift pulse voltage
Reset pulse voltage
Clamp pulse voltage
Power supply voltage
“H” level
“L” level
“H” level
“L” level
“H” level
“L” level
“H” level
“L” level
4.5
5.0
5.5
VfA
V
0
0
0.3
V_SH
VfA
“H”
- 0.5
VfA
“H”
VfA
“H”
V
0
0
0.5
4.5
5.0
5.5
V_RS
V
0
0
0.5
4.5
5.0
5.5
V_CP
V
0
0
0.5
V_OD
11.4 12.0 13.0
V
Note 10: VfA “H” means the high level voltage of VfA when SH pulse is high level.
Clock Characteristics (Ta = 25°C)
Characteristics
Clock pulse frequency
Reset pulse frequency
Clamp pulse frequency
Clock 1 capacitance
Clock 2 capacitance
Shift gate capacitance
Reset gate capacitance
Clamp gate capacitance
Note 11: V_OD = 12 V
(Note 11)
(Note 11)
Symbol
ffA
f_RS
f_CP
Cf1
Cf2
C_SH
C_RS
C_CP
Min Typ. Max Unit
0.3
1.0
6.0 MHz
0.3
1.0
6.0 MHz
0.3
1.0
6.0 MHz
¾
190 300
pF
¾
160 300
pF
¾
20
100
pF
¾
10
40
pF
¾
10
40
pF
Note
(Note10)
6
2002-12-25