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TCD2560D Datasheet, PDF (4/15 Pages) Toshiba Semiconductor – TOSHIBA CCD Image Sensor CCD (charge coupled device)
TCD2560D
Optical/Electrical Characteristics
(Ta = 25°C, VOD = 12 V, Vf = VSH = VRS = VCP = 5 V (pulse), ff = 1.0 MHz,
fRS = 1 MHz, tINT = 10 ms, light source = light source A + CM500S filter (t = 1 mm),
load resistance = 100 kW)
Characteristics
Symbol
Min Typ. Max Unit
Note
Sensitivity
Photo response non uniformity
Saturation output voltage
Saturation exposure
Dark signal voltage
Dark signal non uniformity
DC power dissipation
Total transfer efficiency
Output impedance
DC compensation output voltage
Random noise
Reset noise
Masking noise
Red
Green
Blue
R (R)
R (G)
R (B)
PRNU (1)
PRNU (3)
VSAT
SE
VDRK
DSNU
PD
TTE
ZO
VOS
NDs
VRSN
VMS
3.4
4.8
6.2
4.7
6.7
8.7 V/lxï½¥s
2.0
2.9
3.8
¾
15
20
%
¾
3
12
mV
2.5
3.0
¾
V
¾ 0.45 ¾ Ix・s
¾
0.5
3.0
mV
¾
2.0
9.0
mV
¾
300 400 mW
92
98
¾
%
¾
0.3
1.0
kW
4.0
5.0
6.0
V
¾
1.0
―
mV
¾
0.3
1.0
V
¾
0.1
0.5
V
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
(Note 7)
(Note 8)
(Note 9)
(Note 8)
(Note 8)
Note 2: Sensitivity is defined for each color of signal outputs average when the photosensitive surface is applied
with the light of uniform illumination and uniform color temperature.
Note 3: PRNU (1) is defined for each color on a single chip by the expressions below when the photosensitive
surface is applied with the light of uniform illumination and uniform color temperature.
PRNU (1) = Dc ´ 100 (%)
c
Where ? is average of total signal output and Dc is the maximum deviation from ? . The amount of
incident light is shown below.
Red = 1/2ï½¥SE
Green = 1/2ï½¥SE
Blue = 1/4ï½¥SE
Note 4: PRNU (3) is defined as maximum voltage with next pixels, where measured at 5% of SE (typ.).
Note 5: VSAT is defined as minimum saturation output of all effective pixels.
Note 6: Definition of SE
SE =
VSAT
RG
(Ix × s)
4
2002-12-25