TC51WHM516AXGN65 Datasheet, PDF (6/11 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM

WRITE CYCLE 1 ( WE CONTROLLED) ^{(See Note 8)}
TC51WHM516AXGN65,70
Address
A0 to A20
WE
CE1
CE2
UB , LB
D_OUT
I/O1 to I/O16
D_IN
I/O1 to I/O16
t_AS
t_CH
(See Note 10)
(See Note 9)
t_WC
t_WP
t_WR
t_CW
t_WR
t_BW
t_WR
t_ODW
t_OEW
Hi-Z
t_DS
t_DH
VALID DATA IN
(See Note 11)
(See Note 9)
WRITE CYCLE 2 (CE CONTROLLED) ^{(See Note 8)}
Address
A0 to A20
WE
CE1
CE2
UB , LB
D_OUT
I/O1 to I/O16
D_IN
I/O1 to I/O16
t_AS
t_CH
t_WC
t_WP
t_WR
t_CW
t_WR
t_BW
t_WR
Hi-Z
t_BE t_ODW
t_COE
(See Note 9)
Hi-Z
t_DS
t_DH
VALID DATA IN
2002-03-14 6/11