TPCP8003-H Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

R_{DS (ON)} – Ta
300
Common source
Pulse test
250
ID = 2.2A
1.1A
200
ID = 2.2A
1.1A
150
VGS = 4.5 V
100
10 V
50
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPCP8003-H
10
Common source
Ta = 25°C
Pulse test
I_DR – V_DS
10
3
5
1
1
0
VGS = -1V
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain-source voltage V_DS (V)
Capacitance – V_DS
1000
Ciss
100
Coss
10
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1
1
Crss
10
100
Drain-source voltage V_DS (V)
V_th – Ta
3
2.5
2
1.5
1
Common source
0.5 VDS = 10 V
ID = 1 mA
Pulse test
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2
(1)
1.6
1.2
(2)
0.8
P_D – Ta
(1)Device mounted on a glass-epoxy
board (a) (Note 2a)
(2)Device mounted on a glass-epoxy
board (b) (Note 2b)
ｔ＝5s
0.4
0
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
140
14
Common source
120
ID = 2.2 A
Ta = 25°C
12
Pulse test
100
10
20
VDD = 80 V
80
VDS
60
40
8
VDD = 80 V
6
40 ⁴⁰
VGS
4
20
20
2
0
0
0 1 2 3 4 5 67 8 9
Total gate charge Q_g (nC)
5
2007-06-22