TPCP8003-H Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

Thermal Characteristics
Characteristic
Symbol
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
Max
74.4
148.8
Unit
°C/W
°C/W
TPCP8003-H
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: V_DD = 24 V, T_ch = 25°C (initial), L = 1 mH, R_G = 1 Ω, I_AR = 2.2A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: _{* Weekly code: (Three digits)}
Week of manufacture
(01 for first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
2
2007-06-22