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TPCP8003-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) | |||
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TPCP8003-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCP8003-H
High Efficiency DCï¼DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
⢠Small footprint due to a small and thin package
⢠High speed switching
⢠Small gate charge: QSW = 7.5 nC (typ.)
⢠Low drain-source ON-resistance: RDS (ON) = 130 m⦠(typ.)
⢠High forward transfer admittance: |Yfs| = 5.4 S (typ.)
⢠Low leakage current: IDSS = 10 μA (max) (VDS = 100V)
⢠Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25â) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
Unit
100
V
100
V
±20
V
2.2
A
8.8
1.68
W
0.84
W
3.93
mJ
2.2
A
0.016
mJ
150
°C
â55 to 150
°C
0.475
1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12+-00..1132
1.12+-00..1132
1ï¼Source
2ï¼Source
3ï¼Source
4ï¼Gate
5ï¼Drain
6ï¼Drain
7ï¼Drain
8ï¼Drain
JEDEC
0.28
+0.1
-0.11
â
JEITA
â
TOSHIBA
2-3V1K
Weight: 0.017 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
8765
8003H
â»
1234
Lot No.
1
2007-06-22
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