TLP141G_07 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Photo−Transistor Programmable Controllers

TLP141G
t_on – I_F
30
Ta = 25°C
R_L=100Ω
V_AA=50V
20
R_GK=10kΩ
10
27kΩ
1
0
10
20
30
40
Forward current IF(mA)
I_FT – Ta
20
V_AＫ=6V
R_L=100Ω
10
R_GK=10kΩ
5
27kΩ
3
0
20
40
60
80
100
Ambient temperature Ta (°C)
I_H – Ta
0.7
0.5
R_GK=10kΩ
0.3
27kΩ
dv / dt – R_GK
200
Ta = 25°C
100
V_AK=200V
50
400V
30
10
1
35
10
30 50
100
Gate-cathode resistance R_GK (kΩ)
I_FT – R_GK
100
Ta = 25°C
VAK=6V
50
R_L=100Ω
30
10
5
2
1
3 5 10
30 50 100 200
Gate-cathode resistance R_GK (kΩ)
0.1
0
20
40
60
80
100
Ambient temperature Ta (°C)
500 ^{Ta = 85°C}
V_AK = 400V
300 _{RGK= 27kΩ}
dv / dt – C_GK
100
50
30
10
5
0.001
0.003
0.005
0.01
Gate-cathode capacitance C_GK(μF)
I_H – R_GK
5
Ta = 25°C
3
1
0.5
0.3
0.1
1
3 5 10
30 50 100 200
Gate-cathode resistance R_GK (kΩ)
5
2007-10-01