TLP141G_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Photo−Transistor Programmable Controllers

TLP141G
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Off−state current
Reverse current
On−state voltage
Holding current
Off−state dv / dt
Capacitance
Symbol
V_F
I_R
C_T
I_DRM
I_RRM
V_TM
I_H
dv/dt
C_j
Test Condition
Min.
I_F = 10 mA
1.0
V_R = 5 V
―
V = 0, f = 1 MHz
―
V_AK = 400 V
R_GK = 27 kΩ
Ta = 25°C
―
Ta = 100°C ―
V_KA = 70 mA
R_GK = 27 kΩ
Ta = 25°C
―
Ta = 100°C ―
I_TM = 100 mA
―
R_GK = 27 kΩ
―
V_AK = 280 V, R_GK = 27 kΩ
5
Anode to gate
―
V = 0, f = 1 MHz
Gate to cathode ―
Typ. Max. Unit
1.15 1.3
V
―
10
μA
30
―
pF
10 5000 nA
1
100 μA
10 5000 nA
1
100 μA
0.9 1.3
V
0.2
1
mA
10
― V / μs
20
―
pF
350
―
Coupled Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Turn−on time
Coupled dv / dt
Capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
I_FT
t_on
dv/dt
C_S
R_S
BV_S
Test Condition
V_AK = 6 V, R_GK = 27kΩ
I_F = 50mA, R_GK = 27kΩ
V_S = 500 V, R_GK = 27kΩ
V_S = 0, f = 1 MHz
V_S = 500 V, R.H. ≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min. Typ. Max. Unit
―
4
10
mA
―
10
―
μs
500
―
― V / μs
―
0.8
―
pF
5×10¹⁰ 10¹⁴
―
Ω
2500
―
―
Vrms
―
5000 ―
―
5000 ―
Vdc
3
2007-10-01