TIM1011-2L Datasheet, PDF (5/5 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

VDS=9V, IDS=1.0A
TIM11011-2L S-PARAMETERS
(MAGN. and ANGLES)
TIM1011-2L
f=10.4 – 13.2GHz
FREQUENCY
(GHz)
S11
MAG ANG
S21
MAG ANG
S12
MAG ANG
S22
MAG
ANG
10.4
0.76
148
2.49
-85
0.066 -139
0.55
121
10.8
0.54
110
2.98
-131
0.110
176
0.46
62
11.2
0.25
50
3.12
180
0.145
129
0.38
-9
11.6
0.16
-63
2.84
132
0.153
84
0.36
-67
12.0
0.26
-123
2.55
89
0.155
43
0.37
-103
12.4
0.30
-164
2.37
46
0.158
3
0.34
-130
12.8
0.34
142
2.30
-1
0.164
-42
0.22
-146
13.2
0.49
58
2.05
-61
0.154 -100
0.18
-48
5