TIM1011-2L Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1011-2L
37
VDS = 9 V
36
IDS ≅ 0.85A
35 _{Pin = 26 dBm}
34
Output Power vs. Frequency
33
32
31
9.7
10.2
10.7
11.2
11.7
12.2
12.7
Frequency (GHz)
Output Power vs. Input Power
36
90
f = 11.7 GHz
35
80
VDS = 9V
34 IDS ≅ 0.85 A
70
33
60
32
50
31
40
30
30
29
20
28
10
27
0
20
22
24
26
28
30
Pin (dBm)
3