TIM1011-2L Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1011-2L
POWER DISSIPATION VS. CASE TEMPERATURE
25
20
15
10
5
0
0
40
80
120
160
200
Tc (℃)
IM3^IMv³s.^vO^s.U^OT^UP^TU^PT^UP^TO^PW^OWER^ERC^CH^HA^AR^RA^AC^CT^TE^ER^RI^ISTIC^S
-10
f = 11.7 GHz
VDS = 9 V
IDS ≅ 1.0 A
-20 _{∆f= 5MHz}
-30
-40
-50
-60
17
19
21
23
25
27
29
Po (dBm), Single Carrie
Po(dBm), Single Carrier
4