SSM6J502NU_14 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSVI)

1000
100
R_th – T_w
b
a
10
1
0.001
Single pulse
a. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
b. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 2.27 mm²)
0.01
0.1
1
10
100 1000
Pulse width t_w (s)
SSM6J502NU
P_D – T_a
1400 _{a: Mounted on FR4 board}
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm²)
b: Mounted on FR4 board
1200 (25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.27mm² )
1000
a
800
600
b
400
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5
2014-03-01