SSM6J502NU_14 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSVI)

100
Common Source
VDS = -3 V
Ta = 25°C
30 _{Pulse test}
|Y_fs| – I_D
10
3
1
0.3
0.1
-0.01
-0.1
-1
-10
Drain current I_D (A)
10000
C – V_DS
5000
3000
Ciss
1000
500
300
Coss
Crss
100
50
Common Source
30 _{Ta = 25°C}
f = 1 MHz
VGS = 0 V
10
-0.1
-1
-10
-100
Drain–source voltage V_DS (V)
SSM6J502NU
I_DR – V_DS
10
1
Ta =100 °C
25 °C
0.1
Common Source
VGS = 0 V
Pulse test
D
0.01
-25 °C
G
I_DR
0.001
0
S
0.2
0.4
0.6
0.8
1.0
1.2
Drain–source voltage V_DS (V)
10000
toff
tf
1000
t – I_D
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
100
ton
10
tr
1
-0.001
-0.01
-0.1
-1
-10
Drain current I_D (A)
Dynamic Input Characteristic
-8
Common Source
ID = -4.4 A
Ta = 25°C
-6
-4
VDD = - 10 V _{VDD = - 16 V}
-2
0
0
10
20
30
40
50
Total Gate Charge Qg (nC)
4
2014-03-01