SSM3K123TU_14 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

SSM3K123TU
r_th – t_w
600
c
b
100
a
10
Single pulse
a: Mounted on ceramic board
(25.4mm × 25.4mm × 0.8t , Cu Pad : 645 mm²)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm²)
c: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 0.36 mm²Ã—3)
11
0.001 0.01
0.1
1
10
100 600
Pulse width t_w (s)
1000
800
a
600
b
400
P_D – T_a
a: Mounted on ceramic board
(25.4mm × 25.4mm × 0.8t ,
Cu Pad : 645 mm²)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
2
Cu Pad : 645 mm )
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature T_a (°C)
5
2014-03-01