SSM3K123TU_14 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

10
4.0 V
8
6
4
I_D – V_DS
1.8 V
1.5 V
2.5 V
V_GS = 1.2 V
2
Common Source
Ta = 25 °C
0
0
0.2
0.4
0.6
0.8
1.0
Drain - Source voltage V_DS (V)
R_{DS (ON)} – V_GS
100
ID =3.0A
Common Source
SSM3K123TU
I_D – V_GS
10
Common Source
VDS = 3 V
1
0.1
0.01
0.001
Ta = 100 °C
25 °C
− 25 °C
0.0001
0
1.0
2.0
Gate - Source voltage V_GS (V)
R_{DS (ON)} – I_D
100
Common Source
Ta = 25°C
50
25 °C
Ta = 100 °C
− 25 °C
0
0
2
4
6
8
Gate - Source voltage V_GS (V)
50
0
0
1.5V
1.8 V
2.5 V
V_GS = 4.0 V
2
4
6
8
10
Drain current I_D (A)
R_{DS (ON)} – Ta
100
Common Source
50
3.0A / 2.5 V
1.0 A / 1.8 V
0.5A / 1.5 V
ID = 3.0 A / VGS = 4.0 V
0
−50
0
50
100
150
Ambient temperature Ta (°C)
V_th – Ta
1.0
Common Source
VDS = 3 V
0.8
ID = 1 mA
0.6
0.4
0.2
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2014-03-01