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SSM3K123TU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type | |||
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SSM3K123TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K123TU
Power Management Switch Applications
High-Speed Switching Applications
⢠1.5 V drive
⢠Low ON-resistance:
Ron = 66 m⦠(max) (@VGS = 1.5 V)
Ron = 43 m⦠(max) (@VGS = 1.8 V)
Ron = 32 m⦠(max) (@VGS = 2.5 V)
Ron = 28 m⦠(max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD (Note 1)
PD (Note 2)
Tch
Tstg
Rating
20
± 10
4.2
8.4
800
500
150
â55~150
Unit
V
V
A
mW
°C
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on a ceramic board.
(25.4 mm à 25.4 mm à 0.8 t, Cu Pad: 645 mm2 )
Mounted on a FR4 board.
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
1
2
3
UFM
1: Gate
2: Source
3: Drain
JEDEC
â
JEITA
â
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristics
Drain-Source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
GateâSource Charge
GateâDrain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS ID = 1 mA, VGS = 0V
V (BR) DSX ID = 1 mA, VGS = â 10 V
20
â¯
â¯
V
12
â¯
â¯
IDSS
VDS = 20 V, VGS = 0V
â¯
â¯
1
μA
IGSS
VGS = ± 10 V, VDS = 0V
â¯
â¯
±1
μA
Vth
VDS = 3 V, ID = 1 mA
0.35 â¯
1.0
V
âYfsâ
VDS = 3 V, ID = 3.0 A
(Note 3) 12.5 25
â¯
S
ID = 3.0 A, VGS = 4.0 V
(Note 3)
â¯
19
28
RDS (ON)
ID = 3.0 A, VGS = 2.5 V
ID = 1.0 A, VGS = 1.8 V
(Note 3)
â¯
23
32
mΩ
(Note 3)
â¯
28
43
ID = 0.5 A, VGS = 1.5 V
(Note 3)
â¯
35
66
Ciss
⯠1010 â¯
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
162
â¯
pF
Crss
â¯
150
â¯
Qg
⯠13.6 â¯
Qgs
VDS = 10 V, IDS= 4.2 A, VGS = 4 V
â¯
9.8
â¯
nC
Qgd
â¯
3.8
â¯
ton
VDD = 10 V, ID = 1.0 A,
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
â¯
17
â¯
ns
â¯
30
â¯
VDSF
ID = â4.2 A, VGS = 0 V
(Note 3) ⯠â 0.8 â 1.2
V
Start of commercial production
2007-04
1
2014-03-01
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