SSM3J321T Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)

1000
100
r_th – t_w
b
a
10
1
0.001 0.01
a: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 645 mm²)
b: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 0.8 mm²Ã—3)
0.1
1
10
100 1000
Pulse width t_w (s)
SSM3J321T
1000
800
a
600
b
400
P_D – T_a
a: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 645 mm²)
b: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 0.8 mm²Ã—3)
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5
2008-10-20