SSM3J321T Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)

V_th – Ta
-1.0
Common Source
VDS = -3 V
-0.8
ID = -1 mA
-0.6
-0.4
-0.2
0
−50
0
50
100
150
Ambient temperature Ta (°C)
SSM3J321T
30
Common Source
VDS = -3 V
10 _{Ta = 25 °C}
3
1
|Y_fs| – I_D
0.3
0.1
0.03
0.01
1
-10
-100
-1000
Drain current I_D (mA)
-10000
5000
3000
C – V_DS
1000
Ciss
500
300
100
50 _{Common Source}
30 Ta = 25 °C
f = 1 MHz
VGS = 0 V
10
-0.1
-1
Coss
Crss
-10
-100
Drain–source voltage V_DS (V)
Dynamic Input Characteristic
-8
-6
VDD = -10 V
-4
VDD = -16 V
-2
Common Source
ID = -4.6 A
Ta = 25 °C
0
0
5
10
15
Total Gate Charge Qg (nC)
1000
toff
tf
100
t – I_D
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7 Ω
ton
10
tr
1
-0.01
-0.1
-1
-10
Drain current I_D (A)
I_DR – V_DS
10
Common Source
VGS = 0 V
Ta = 25 °C
1
D
I_DR
G
S
0.1
0.01
0.001
0.0001
0
100 °C
25 °C
−25 °C
0.2
0.4
0.6
0.8
1.0
1.2
Drain–source voltage V_DS (V)
4
2008-10-20