SSM3J321T Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)

I_D – V_DS
-10
-4.5 V -2.5 V
-1.8 V
-8
-6
-1.5 V
-4
VGS = -1.2 V
-2
Common Source
0
Ta = 25 °C
0
-0.2
-0.4
-0.6
-0.8
-1
Drain–source voltage V_DS (V)
SSM3J321T
-10000
-1000
Common Source
VDS = -3 V
I_D – V_GS
-100
-10 _{Ta = 100 °C}
-1
-0.1
−25 °C
25 °C
-0.01
0
-0.5
-1.0
-1.5
-2.0
Gate–source voltage V_GS (V)
180
160
140
120
100
80
60
40
20
0
0
R_{DS (ON)} – V_GS
ID = -0.3 A
Common Source
25 °C
Ta = 100 °C
−25 °C
-2
-4
-6
-8
Gate–source voltage V_GS (V)
R_{DS (ON)} – I_D
200
Common Source
Ta = 25°C
100
0
0
VGS = -1.5 V
-1.8 V
-2.5 V
-4.5 V
-2
-4
-6
-8
-10
Drain current I_D (A)
180
160
140
120
100
80
60
40
20
0
0
R_{DS (ON)} – V_GS
ID = -3.0 A
Common Source
25 °C
Ta = 100 °C
−25 °C
-2
-4
-6
-8
Gate–source voltage V_GS (V)
R_{DS (ON)} – Ta
120
Common Source
ID = -0.3 A / VGS = -1.5 V
100
-1.0 A / -1.8 V
80
-2.0 A / -2.5 V
60
40
-3.0 A / -4.5 V
20
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2008-10-20