SSM3J134TU_14 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

Rth ^{– t}w
600
b
a
100
10
Single pulse
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm²)
b: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.36 mm²Ã—3)
1
0.001 0.01
0.1
1
10
100 600
Pulse Width t_w (s)
SSM3J134TU
P_D – T_a
1000
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm²)
800
600
400
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5
2014-03-01