SSM3J134TU_14 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

SSM3J134TU
I_D – V_DS
-8
-4.5 V
-2.5 V
-1.8 V
-6
-4
VGS = -1.5 V
-2
Common Source
Ta = 25 °C
Pulse Test
0
0
-0.2
-0.4
-0.6
-0.8
-1
Drain–source voltage V_DS (V)
R_{DS (ON)} – V_GS
300
ID = -1.5 A
Common Source
Pulse Test
200
25 °C
100
Ta = 100 °C
- 25 °C
0
0
-2
-4
-6
-8
Gate–source voltage V_GS (V)
-10 _{Common Source}
VDS = -3 V
Pulse Test
-1
I_D – V_GS
-0.1
-0.01
Ta = 100 °C
25 °C
- 25 °C
-0.001
-0.0001
0
-1.0
-2.0
Gate–source voltage V_GS (V)
R_{DS (ON)} – I_D
300
Common Source
Ta = 25°C
Pulse Test
-1.5 V
200
-1.8 V
100
0
0
-2.5 V
VGS = -4.5 V
-2.0
-4.0
-6.0
-8.0
Drain current I_D (A)
R_{DS (ON)} – Ta
300
Common Source
Pulse Test
-1.0 A / -2.5 V
200
-0.5 A / -1.8 V
-0.25 A / -1.5 V
100
ID = -1.5 A / VGS = -4.5 V
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
V_th – Ta
-1.0
Common Source
VDS = -3 V
ID = -1 mA
-0.5
0
−50
0
50
100
150
Ambient temperature Ta (°C)
2014-03-01