2SJ681_09 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

2SJ681
r_th − t_w
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
10 μ
100 μ
Single Pulse
PDM
t
T
Duty = t/T
Rth _(ch-c) = 6.25°C/W
1m
10 m
100 m
1
10
Pulse width t_w (s)
Safe operating area
−100
ID max (pulsed) *
−10
ID max (continuous)
1 ms *
DC operation
Tc = 25°C
100 μs *
−1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.1
−0.1
−1
VDSS max
−10
−100
Drain-source voltage V_DS (V)
E_AS – T_ch
50
40
30
20
10
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
0V
−15 V
B_VDSS
I_AR
V_DD
V_DS
Test circuit
R_G = 25 Ω
V_DD = −25 V, L = 2.2 mH
Wave form
Ε_AS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS ^− VDD
⎟⎟⎠⎞
5
2009-09-29