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2SJ681_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) | |||
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (UâMOSIII)
2SJ681
2SJ681
Relay Drive, DCâDC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drain-source ON-resistance: RDS (ON) = 0.12 ⦠(typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = â100 μA (max) (VDS = â60 V)
z Enhancement mode: Vth = â0.8 to â2.0 V (VDS = â10 V, ID = â1 mA)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.9
1.1 ± 0.2
0.6 MAX.
Absolute Maximum Ratings (Ta = 25°C)
2.3 2.3
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
Drainâgate voltage (RGS = 20 kΩ)
Gateâsource voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
â60
V
â60
V
±20
V
â5
A
â20
A
20
W
40.5
mJ
â5
A
2
mJ
150
°C
â55 to 150
°C
123
0.8 MAX.
1.1 MAX.
0.6 ± 0.15
0.6 ± 0.15
1. GATE
2. DRAIN
ï¼HEAT SINKï¼
3. SOURSE
2
1
3
JEDEC
â
JEITA
â
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and
Methodsâ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (châc)
Rth (châa)
6.25
°C / W
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150â.
Note 2: VDD = â25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = â5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29
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